[12a-N205-1~12] 12.4 Organic light-emitting devices and organic transistors

[12a-N205-5] Influence of Semiconductor Layer Structure in Extremely Sharp Switching Organic Thin Film Transistor

〇(M1)Keito Murata¹, Gyo Kitahara¹, Satoru Inoue¹, Satoshi Matsuoka¹, Shunto Arai¹, Tatsuo Hasegawa¹ (1.U-Tokyo)

Keywords:Organic Semiconductor, KFM

In the development of organic thin-film transistors (OTFTs), the bottom-contact (BC) structure is advantageous for integration, but the deterioration of device characteristics due to the semiconductor-ordered structure at the electrode-semiconductor interface is an urgent issue. We have developed a method to fabricate single-crystal organic semiconductors on a trapless highly liquid-repellent insulating film, and succeeded in fabricating BC-type OTFTs with both high switching steepness and high mobility. Using this method,we have fabricated devices by precisely controlling semiconductor layer structure. Furthermore, KFM measurements revealed that the potential drop near the electrode semiconductor interface has a significant effect on the device characteristics. In this talk, I will discuss the correlation between semiconductor layer structure, such as the number of layers and materials, and the TFT characteristics based on the KFM results.