Charge transfer and carrier-type conversion of n-type SnO<sub>2</sub> thin-film by N<sub>2</sub> annealing

Kotaro Watanabe; Takuma Kawaguchi; Tomohiro Yamaguchi; Takeyoshi Onuma; Tohru Honda; Shinya Aikawa

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-N206-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Sep 12, 2021 9:00 AM - 11:30 AM N206 (Oral)

Akane Samizo(Tokyo Univ of Science)

9:45 AM - 10:00 AM

[12a-N206-4] Charge transfer and carrier-type conversion of n-type SnO₂ thin-film by N₂ annealing

〇(M1)Kotaro Watanabe¹, Takuma Kawaguchi¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

Keywords:N2 annealing, carrier-type conversion, n-type SnO2

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Presentation information

[12a-N206-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-N206-4] Charge transfer and carrier-type conversion of n-type SnO2 thin-film by N2 annealing

[12a-N206-4] Charge transfer and carrier-type conversion of n-type SnO₂ thin-film by N₂ annealing