[12a-N206-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-N206-6] Instability of Sol-Gel-grown BaSnO₃ thin film FETs and Resistive switching Behaviors

〇(M1)Hirotaka Maeyama¹, Ryo Nouchi^1,2 (1.Osaka Pref. Univ., 2.JST-PRESTO)

Keywords:barium stannate, perovskite, sol-gel synthesis

In this study, sol-gel grown BaSnO₃ thin films were fabricated on SiO₂/p⁺⁺Si substrates as well as highly doped Si substrates without a thermal oxide layer, and their electrical properties were investigated. The BaSnO₃ films were fabricated by spin coating of a precursor solution generated from Ba(CH₃COO)₂ and Sn(CH₃COO)₄. It was found that the drain current increased when the drain voltage was above 20 V in the output characteristics of FETs. Two-terminal measurements of the BaSnO₃ films revealed that the instability observed in the FET characteristics was attributable to a resistance switching phenomenon that occurred at the electrode contacts.