[12a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

[12a-N305-10] Uniformity characterization of SiC, GaN, and a-Ga₂O₃ Schottky contacts using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Yuto Kawasumi¹, Fumimasa Horikiri², Noboru Fukuhara², Tomoyoshi Mishima³, Takashi Shinohe⁴ (1.Univ. of Fukui, 2.SCIOCS, 3.Hosei Univ., 4.FLOSFIA)

Keywords:Schottky contact, scanning internal photoemission microscopy, wide bandgap semiconductor

We have charactrized uniformity of SiC, GaN, and a-Ga₂O₃ Schottky contacts by using scanning internal photoemission microscopy. The stability of the mesurement system was 0.2% in photocurrent and 0.2 meV in barrier height. All kinds of the Schottky contacts showed standered deviations less than 10 meV in the barrier height.