11:30 AM - 11:45 AM
[12a-N305-10] Uniformity characterization of SiC, GaN, and a-Ga2O3 Schottky contacts using scanning internal photoemission microscopy
Keywords:Schottky contact, scanning internal photoemission microscopy, wide bandgap semiconductor
We have charactrized uniformity of SiC, GaN, and a-Ga2O3 Schottky contacts by using scanning internal photoemission microscopy. The stability of the mesurement system was 0.2% in photocurrent and 0.2 meV in barrier height. All kinds of the Schottky contacts showed standered deviations less than 10 meV in the barrier height.