[12a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

[12a-N305-2] SiC Surface Characterization by KrF Excimer Laser Doping
Study of Laser Doping Mechanism (part 2)

〇Kaname Imokawa¹, Ryoichi Nohdomi¹, Yasutsugu Usami¹ (1.Gigaphoton Inc.)

Keywords:laser doping, SiC, surface characterization

There is an issue that high temperature process is required for crystal recovery and activation. We proposed the method of nitrogen incorporation with irradiating to SiN menbrane deposited on SiC substrate. However, we didn't consider surface characterization and mechanism of laser doping. In this paper, we report transmission electron microscope of nitrogen doped SiC with consideration.