[12a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

[12a-N305-5] Conduction mechanism at metal/heavily-doped SiC Schottky interfaces

〇Masahiro Hara¹, Hajime Tanaka^1,2, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Osaka Univ.)

Keywords:SiC, Schottky barrier diodes, Ohmic contacts