[12a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

△ [12a-N305-6] Reduction of Schottky barrier height of low work function metal/n-type 4H-SiC interface by post metallization annealing

〇Takuma Doi^1,2, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Mitsuaki Shimizu², Osamu Nakatsuka^1,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.AIST-NU GaN-OIL, 3.IMaSS, Nagoya Univ.)

Keywords:4H-SiC, Schottky, contact