Takuma Doi

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Speaker, Author, Co-Author

Sun. Sep 12, 2021 9:00 AM - 11:45 AM N305 (Oral)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[12a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

10:15 AM - 10:30 AM

△ [12a-N305-6] Reduction of Schottky barrier height of low work function metal/n-type 4H-SiC interface by post metallization annealing

〇Takuma Doi^1,2, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Mitsuaki Shimizu², Osamu Nakatsuka^1,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.AIST-NU GaN-OIL, 3.IMaSS, Nagoya Univ.)

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