[12a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

[12a-N305-9] Measurement of current-induced magnetic fields in SiC devices by silicon vacancy quantum sensor

〇Yuichi Yamazaki¹, Yuta Masuyama¹, Shin-ichiro Sato¹, Takahiro Makino¹, Naoto Yamada¹, Takahiro Satoh¹, Kazutoshi Kojima², Hidekazu Tsuchida³, Norihiro Hoshino³, Takeshi Ohshima¹ (1.QST, 2.AIST, 3.CRIEPI)

Keywords:Silicon vacancy, quantum sensing, current-induced magnetic field

Silicon vacancies (V_Si) in silicon carbide (SiC) can act as quantum sensors to measure magnetic fields and temperatures with high accuracy and spatial resolution. In this study, the magnetic field induced by the current flowing inside a pn diode was measured by optical detection magnetic resonance (ODMR) (= quantum sensing). As a result, the ODMR signal caused by the current-induced magnetic field was detected.