[12a-N323-1~8] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[12a-N323-1] Boron doping for silicon film deposition using boron trichloride gas

〇Mana Otani¹, Mitsuko Muroi¹, Hitoshi Habuka¹ (1.Yokohama National Univ.)

Keywords:BCl3, SiH2Cl2, boron doping

Dopant gas such as diborane is used when forming a semiconductor Si thin film by chemical vapor deposition. Boron trichloride is a safer doping gas. It was reported that boron trichloride can be used for etching at high temperatures and for film formation at low temperatures. In this study, B-doped Si film formation was performed with BCl₃ and dichloromethane, and the behavior of deposition rate was investigated.