The 82nd JSAP Autumn Meeting 2021

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13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[12a-N323-1~8] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Sun. Sep 12, 2021 9:45 AM - 12:00 PM N323 (Oral)

Daisuke Yamane(Ritsumeikan Univ.), Shiro Hara(National Institute of Advanced Industrial Science and Technology)

10:00 AM - 10:15 AM

[12a-N323-2] CVD film formation from boron trichloride and monomethylsilane gases

Mitsuko MUroi1, 〇Hitoshi Habuka1 (1.Yokohama National Univ.)

Keywords:Si-B-C film, SiH3CH3, BCL3

By BCl3 and SiH2CL2 gases, the silicon film containing boron atoms at the concentrations higher than the solubility limit has been reported to be formed. In this study, SiH3CH3 and BCL3 gases was used for producing the Si-B-C film.