[12a-N323-1~8] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[12a-N323-3] Analysis and Design of Transport Phenomena in ALD reactor

〇Rinsei Sya¹, Hitoshi Habuka¹, Harunori Ushikawa² (1.Yokohama nat. Univ., 2.Watty Corp.)

Keywords:ALD

The atomic layer deposition (ALD) method is mentioned as one of the methods for realizing the miniaturization of microelectronic devices. Although the ALD method can form a film with a uniform thickness at the atomic layer level on a complex structure, it takes an extremely long time to form a film which leads to low productivity. To solve these problems, it is necessary to analyze and optimize the flow and heat in the device. Therefore, the purpose of this research is to create a three-dimensional numerical calculation model of the ALD device, then analyze and design the heat and flow in it.