[12a-N323-1~8] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[12a-N323-5] Boron Doping Method using BCl₃ gas for Silicon Minimal CVD

Atsuhiro Motomiya¹, 〇Yuki Kamochi¹, Hitoshi Habuka¹, Shin-ichi Ikeda^2,3, Yuuki Ishida^2,3, Shiro Hara^2,3 (1.Yokohama National Univ., 2.MINIMAL, 3.AIST)

Keywords:minimal CVD, SiH2Cl2, BCl3

In an experiment using minimal CVD system, by BCl₃ and DCS gases,the mixed film of silicon and boron has been reported to be formed. In this study, we investigated the relationship between the flow rate of BCl₃ gases and the concentration of the added boron.