[12a-N323-1~8] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[12a-N323-6] Silicon Nitride Film Formations Using Dichlorosilane in Magnetic-Mirror Confined Plasma CVD Equipment for Minimal Fab System

〇Tetsuya Goto¹, Seiji Kobayashi², Thai Cuong², Yuki Yabuta³, Shigetoshi Sugawa¹, Shiro Hara^4,5 (1.NICHe, Tohoku Univ., 2.Kotec, 3.Seinan, 4.AIST, 5.Minimal)

Keywords:Silicon Nitride Film, Minimal, Plasma CVD

We developed silicon nitride (SiN) film formations by low-damage plasma CVD using the compact magnetic mirror confined ECR plasma source for the minimal fab system. We deposited SiN films using dichlorosilane and nitrogen gases as precursors. Because dichlorosilane is the liquid gas source, the gas source can be installed in the minimal equipment, which is remarkable advantages against the widely used silane which is the special high-pressure gases. The SiN films with almost the same resistance against HF as that of thermal CVD SiN films deposited at 750 oC could be obtained at the depositon temperature of 100 oC.