[12a-S101-1~9] FS.1 Focused Session "AI Electronics"

△ [12a-S101-3] Impact of degradation of electrical characteristics of FeFETs on reservoir computing

〇Eishin Nako¹, Kasidit Toprasertpong¹, Zeyu Wang¹, Ryosho Nakane¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

Keywords:reservoir computing, FeFET

We have proposed and experimentally demonstrated FeFETs as a device to implement reservoir computing. In this study, we investigated how the reservoir performance changes with the degradation of the electrical characteristics of FeFETs. As a result, it was found that high reservoir performance can be maintained by training the device just before test is performed, and even if the weights used for training are not updated, the degradation of reservoir performance can be suppressed by using the device receiving a certain amount of electrical stress.