Stochastic magnetic tunnel junctions with a synthetic antiferromagnetic free layer

Keito Kobayashi; Keisuke Hayakawa; William Borders; Shun Kanai; Junta Igarashi; Hideo Ohno; Shunsuke Fukami

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[12a-S302-1~7] 10.3 Spin devices, magnetic memories and storages

Sun. Sep 12, 2021 9:00 AM - 10:45 AM S302 (Oral)

Itoh Keita(東北大)

9:45 AM - 10:00 AM

▲ [12a-S302-4] Stochastic magnetic tunnel junctions with a synthetic antiferromagnetic free layer

〇(M1)Keito Kobayashi^1,2, Keisuke Hayakawa^1,2, William Borders^1,2, Shun Kanai^1,3,4,5, Junta Igarashi^1,2, Hideo Ohno^1,2,4,5,6,7, Shunsuke Fukami^1,2,4,5,6,7 (1.Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ., 2.Graduate School of Engineering, Tohoku Univ., 3.CSRN, Tohoku Univ., 4.DEFS, Tohoku Univ., 5.CSIS, Tohoku Univ., 6.WPI-AIMR, Tohoku Univ., 7.CIES, Tohoku Univ.)

Keywords:magnetic tunnel junction, probabilistic bit, probabilistic computer