Oral presentation

[11a-S302-1~11] 10.3 Spin devices, magnetic memories and storages

Sat. Sep 11, 2021 9:00 AM - 12:00 PM S302 (Oral)

Ei Shigematsu(Kyoto Univ.), Yuichi Fujita(NIMS)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

▲ [11a-S302-1] Microscopic understanding of thermal annealing effect on the perpendicular magnetic anisotropy of Fe/MgO system

〇(P)Masanobu Shiga¹, Shoya Sakamoto¹, Takuya Tsujikawa¹, Ryoya Ando¹, Kenta Amemiya², Shinji Miwa^1,3 (1.ISSP, U Tokyo, 2.IMSS, KEK, 3.TQSI, U Tokyo)

9:15 AM - 9:30 AM

▲ [11a-S302-2] Higher order magnetic anisotropy in Fe/MgO under electric field: a first-principles calculations

〇Yukie Kitaoka¹, Hiroshi Imamura¹ (1.AIST)

9:30 AM - 9:45 AM

▲ [11a-S302-3] Theoretical analysis of parametric excitation caused by voltage control of magnetic anisotropy

〇Hiroshi Imamura¹, Rie Matsumoto¹ (1.AIST)

9:45 AM - 10:00 AM

▲ [11a-S302-4] Enhancement of heat controlled magnetic anisotropy
by a MgO | tungsten | MgO capping layer

〇Minori Goto^1,2, Reika Kobayashi¹, Ryota Okuno¹, Yuma Yamada¹, Tomohito Mizuno³, Takekazu Yamane³, Naomichi Degawa³, Tsuyoshi Suzuki³, Atsushi Shimura³, Susumu Aoki³, Junichiro Urabe³, Shinji Hara³, Hikaru Nomura^1,2, Yoshishige Suzuki^1,2 (1.Osaka Univ., 2.CSRN-Osaka, 3.TDK corp.)

10:00 AM - 10:15 AM

▲ [11a-S302-5] Room temperature spin bolometer in sub-gigahertz frequency region

〇Minori Goto^1,2, Yuma Yamada¹, Atsushi Shimura³, Tsuyoshi Suzuki³, Naomichi Degawa³, Takekazu Yamane³, Susumu Aoki³, Junichiro Urabe³, Shinji Hara³, Hikaru Nomura^1,2, Yoshishige Suzuki^1,2 (1.Osaka Univ., 2.CSRN-Osaka, 3.TDK corp.)

10:30 AM - 10:45 AM

▲ [11a-S302-6] Quantitative characterization of current-induced spin-orbit torques in a perpendicularly magnetized GaMnAs single film

〇(M2)Chenda Wang¹, Miao Jiang¹, Shinobu Ohya^1,2,3, Masaaki Tanaka^1,2 (1.EEIS, Univ. of Tokyo, 2.CSRN, Univ. of Tokyo, 3.IEI,Univ. of Tokyo)

10:45 AM - 11:00 AM

▼ [11a-S302-7] Spin-orbit torque magnetization switching in a perpendicularly magnetized full Heusler alloy Co₂FeSi

〇(P)Miao JIANG¹, Eisuke Matsushita², Yota Takamura², Shigeki Nakagawa², Shinobu Ohya^1,3,4, Masaaki Tanaka^1,3 (1.EEIS, Univ. of Tokyo, 2.EEE, Tokyo Tech, 3.CSRN, Univ. of Tokyo, 4.IEI, Univ. of Tokyo)

11:00 AM - 11:15 AM

▼ [11a-S302-8] Highly efficient spin current source using BiSb topological insulator / NiO bilayers

〇Julian Sasaki¹, Shigeki Takahashi², Yoshiyuki Hirayama², Pham NamHai¹ (1.Tokyo Tech, 2.Samsung)

11:15 AM - 11:30 AM

▼ [11a-S302-9] Current Driven Domain Wall Motion in Compensated Ferrimagnets: Fast Domain Wall Velocity in a Wide Temperature Range Without External Magnetic Field

〇(PC)SINA RANJBAR¹, Satoshi Sumi¹, S kAMBE¹, Kenji Tanabe¹, Hiroyuki Awano¹ (1.Toyota Technological Institute, Nagoya 468-8511, Japan)

11:30 AM - 11:45 AM

▼ [11a-S302-10] Current-induced domain wall motion in compensated ferrimagnetic TbFeCo films

〇Mio Ishibashi¹, Kay Yakushiji², Masashi Kawaguchi¹, Arata Tsukamoto³, Satoru Nakatsuji¹, Masamitsu Hayashi¹ (1.Univ. of Tokyo, 2.AIST, 3.Nihon University)

11:45 AM - 12:00 PM

△ [11a-S302-11] Numerical simulation of nano-magnet counter driven by strain

〇Shota Abe¹, Minori Goto^1,2, Yoshishige Suzuki^1,2, Daichi Chiba^2,3, Hikaru Nomura^1,2 (1.Osaka Univ., 2.CSRN-Osaka, 3.ISIR, Osaka Univ.)

Oral presentation

[12a-S302-1~7] 10.3 Spin devices, magnetic memories and storages

Sun. Sep 12, 2021 9:00 AM - 10:45 AM S302 (Oral)

Itoh Keita(東北大)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

▼ [12a-S302-1] Large impact of spin-scattering asymmetry at Co₂Fe_0.4Mn_0.6Si/CoFe ferromagnetic interface on current-perpendicular-to-plane giant magnetoresistance

〇Yuichi Fujita¹, Yoshio Miura¹, Taisuke Sasaki¹, Tomoya Nakatani¹, Kazuhiro Hono¹, Yuya Sakuraba¹ (1.NIMS)

9:15 AM - 9:30 AM

▼ [12a-S302-2] Time-averaged response of stochastic magnetic tunnel junctions to field and current

〇(M1)Keito Kobayashi^1,2, William Borders^1,2, Shun Kanai^1,3,4,5, Keisuke Hayakawa^1,2, Hideo Ohno^1,2,4,5,6,7, Shunsuke Fukami^1,2,4,5,6,7 (1.Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ., 2.Graduate School of Engineering, Tohoku Univ., 3.CSRN, Tohoku Univ., 4.DEFS, Tohoku Univ., 5.CSIS, Tohoku Univ., 6.WPI-AIMR, Tohoku Univ., 7.CIES, Tohoku Univ.)

9:30 AM - 9:45 AM

▼ [12a-S302-3] Attempt time determined in stochastic magnetic tunnel junctions

〇(M2)Keisuke Hayakawa^1,2, Shun Kanai^1,3,4,5, Keito Kobayashi^1,2, William Borders^1,2, Junta Igarashi^1,2, Butsurin Jinnai⁶, Hideo Ohno^1,2,3,5,6,7, Shunsuke Fukami^1,2,3,5,6,7 (1.RIEC, Tohoku Univ., 2.Graduate School of Engineering, Tohoku Univ., 3.CSRN, Tohoku Univ., 4.DEFS, Tohoku Univ., 5.CSIS, Tohoku Univ., 6.WPI-AIMR, Tohoku Univ., 7.CIES, Tohoku Univ.)

9:45 AM - 10:00 AM

▲ [12a-S302-4] Stochastic magnetic tunnel junctions with a synthetic antiferromagnetic free layer

〇(M1)Keito Kobayashi^1,2, Keisuke Hayakawa^1,2, William Borders^1,2, Shun Kanai^1,3,4,5, Junta Igarashi^1,2, Hideo Ohno^1,2,4,5,6,7, Shunsuke Fukami^1,2,4,5,6,7 (1.Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ., 2.Graduate School of Engineering, Tohoku Univ., 3.CSRN, Tohoku Univ., 4.DEFS, Tohoku Univ., 5.CSIS, Tohoku Univ., 6.WPI-AIMR, Tohoku Univ., 7.CIES, Tohoku Univ.)

10:00 AM - 10:15 AM

▲ [12a-S302-5] Giant tunnel magnetoresistance under bias voltages in a magnetic tunnel junctions with a tri-layered MgO/MgAl₂O₄/MgO barrier

〇Kenji Nawa^1,2, Keisuke Masuda², Yoshio Miura² (1.Mie Univ., 2.NIMS)

10:15 AM - 10:30 AM

▲ [12a-S302-6] Giant tunnel magnetoresistance and perpendicular magnetic anisotropy in (111)-oriented magnetic tunnel junctions with L1₁-ordered ferromagnetic alloys

〇Keisuke Masuda¹, Hiroyoshi Itoh², Yoshiaki Sonobe¹, Hiroaki Sukegawa¹, Seiji Mitani¹, Yoshio Miura¹ (1.NIMS, 2.Kansai Univ.)

10:30 AM - 10:45 AM

▼ [12a-S302-7] Fabrication of MTJs using D0₃-FeAlSi epitaxial film

〇(DC)Shoma Akamatsu¹, Mikihiko Oogane¹, Masakiyo Tsunoda¹, Yasuo Ando¹ (1.Tohoku Univ.)

Sessions

10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[11a-S302-1~11] 10.3 Spin devices, magnetic memories and storages

▲ [11a-S302-1] Microscopic understanding of thermal annealing effect on the perpendicular magnetic anisotropy of Fe/MgO system

▲ [11a-S302-2] Higher order magnetic anisotropy in Fe/MgO under electric field: a first-principles calculations

▲ [11a-S302-3] Theoretical analysis of parametric excitation caused by voltage control of magnetic anisotropy

▲ [11a-S302-4] Enhancement of heat controlled magnetic anisotropy
by a MgO | tungsten | MgO capping layer

▲ [11a-S302-5] Room temperature spin bolometer in sub-gigahertz frequency region

▲ [11a-S302-6] Quantitative characterization of current-induced spin-orbit torques in a perpendicularly magnetized GaMnAs single film

▼ [11a-S302-7] Spin-orbit torque magnetization switching in a perpendicularly magnetized full Heusler alloy Co₂FeSi

▼ [11a-S302-8] Highly efficient spin current source using BiSb topological insulator / NiO bilayers

▼ [11a-S302-9] Current Driven Domain Wall Motion in Compensated Ferrimagnets: Fast Domain Wall Velocity in a Wide Temperature Range Without External Magnetic Field

▼ [11a-S302-10] Current-induced domain wall motion in compensated ferrimagnetic TbFeCo films

△ [11a-S302-11] Numerical simulation of nano-magnet counter driven by strain

[12a-S302-1~7] 10.3 Spin devices, magnetic memories and storages

▼ [12a-S302-1] Large impact of spin-scattering asymmetry at Co₂Fe_0.4Mn_0.6Si/CoFe ferromagnetic interface on current-perpendicular-to-plane giant magnetoresistance

▼ [12a-S302-2] Time-averaged response of stochastic magnetic tunnel junctions to field and current

▼ [12a-S302-3] Attempt time determined in stochastic magnetic tunnel junctions

▲ [12a-S302-4] Stochastic magnetic tunnel junctions with a synthetic antiferromagnetic free layer

▲ [12a-S302-5] Giant tunnel magnetoresistance under bias voltages in a magnetic tunnel junctions with a tri-layered MgO/MgAl₂O₄/MgO barrier

▲ [12a-S302-6] Giant tunnel magnetoresistance and perpendicular magnetic anisotropy in (111)-oriented magnetic tunnel junctions with L1₁-ordered ferromagnetic alloys

▼ [12a-S302-7] Fabrication of MTJs using D0₃-FeAlSi epitaxial film

Authenticate

Sessions

10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[11a-S302-1~11] 10.3 Spin devices, magnetic memories and storages

▲ [11a-S302-1] Microscopic understanding of thermal annealing effect on the perpendicular magnetic anisotropy of Fe/MgO system

▲ [11a-S302-2] Higher order magnetic anisotropy in Fe/MgO under electric field: a first-principles calculations

▲ [11a-S302-3] Theoretical analysis of parametric excitation caused by voltage control of magnetic anisotropy

▲ [11a-S302-4] Enhancement of heat controlled magnetic anisotropyby a MgO | tungsten | MgO capping layer

▲ [11a-S302-5] Room temperature spin bolometer in sub-gigahertz frequency region

▲ [11a-S302-6] Quantitative characterization of current-induced spin-orbit torques in a perpendicularly magnetized GaMnAs single film

▼ [11a-S302-7] Spin-orbit torque magnetization switching in a perpendicularly magnetized full Heusler alloy Co2FeSi

▼ [11a-S302-8] Highly efficient spin current source using BiSb topological insulator / NiO bilayers

▼ [11a-S302-9] Current Driven Domain Wall Motion in Compensated Ferrimagnets: Fast Domain Wall Velocity in a Wide Temperature Range Without External Magnetic Field

▼ [11a-S302-10] Current-induced domain wall motion in compensated ferrimagnetic TbFeCo films

△ [11a-S302-11] Numerical simulation of nano-magnet counter driven by strain

[12a-S302-1~7] 10.3 Spin devices, magnetic memories and storages

▼ [12a-S302-1] Large impact of spin-scattering asymmetry at Co2Fe0.4Mn0.6Si/CoFe ferromagnetic interface on current-perpendicular-to-plane giant magnetoresistance

▼ [12a-S302-2] Time-averaged response of stochastic magnetic tunnel junctions to field and current

▼ [12a-S302-3] Attempt time determined in stochastic magnetic tunnel junctions

▲ [12a-S302-4] Stochastic magnetic tunnel junctions with a synthetic antiferromagnetic free layer

▲ [12a-S302-5] Giant tunnel magnetoresistance under bias voltages in a magnetic tunnel junctions with a tri-layered MgO/MgAl2O4/MgO barrier

▲ [12a-S302-6] Giant tunnel magnetoresistance and perpendicular magnetic anisotropy in (111)-oriented magnetic tunnel junctions with L11-ordered ferromagnetic alloys

▼ [12a-S302-7] Fabrication of MTJs using D03-FeAlSi epitaxial film

Authenticate

▲ [11a-S302-4] Enhancement of heat controlled magnetic anisotropy
by a MgO | tungsten | MgO capping layer

▼ [11a-S302-7] Spin-orbit torque magnetization switching in a perpendicularly magnetized full Heusler alloy Co₂FeSi

▼ [12a-S302-1] Large impact of spin-scattering asymmetry at Co₂Fe_0.4Mn_0.6Si/CoFe ferromagnetic interface on current-perpendicular-to-plane giant magnetoresistance

▲ [12a-S302-5] Giant tunnel magnetoresistance under bias voltages in a magnetic tunnel junctions with a tri-layered MgO/MgAl₂O₄/MgO barrier

▲ [12a-S302-6] Giant tunnel magnetoresistance and perpendicular magnetic anisotropy in (111)-oriented magnetic tunnel junctions with L1₁-ordered ferromagnetic alloys

▼ [12a-S302-7] Fabrication of MTJs using D0₃-FeAlSi epitaxial film