Reduction of dislocation density in AlGaN using AlN templates patterned with nano-sized pillar shapes

Tomoya Omori; Syunya Tanaka; Shohei Teramura; Moe Shimokawa; Ryota Hasegawa; Sho Iwayama; Hideto Miyake; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[12p-N101-1~20] 15.4 III-V-group nitride crystals

Sun. Sep 12, 2021 1:00 PM - 6:30 PM N101 (Oral)

Kazunobu Kojima(Tohoku Univ.), Shugo Nitta(Nagoya Univ.), Maki Kushimoto(Nagoya Univ.)

5:00 PM - 5:15 PM

△ [12p-N101-15] Reduction of dislocation density in AlGaN using AlN templates patterned with nano-sized pillar shapes

〇(M2)Tomoya Omori¹, Syunya Tanaka¹, Shohei Teramura¹, Moe Shimokawa¹, Ryota Hasegawa¹, Sho Iwayama^1,2, Hideto Miyake², Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹ (1.Fac.Sci&Tec., Meijo Univ., 2.Graduate School of Regional Innovation Studies, Mie Univ.)

Keywords:semiconductor, UV-B, AlGaN

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