Dependence of threshold Power Density on AlGaN underlying layer for AlGaN-based optical-pumped UV-B lasers

Ryota Hasegawa; Shunya Tanaka; Tomoya Omori; Kazuki Yamada; Moe Shimokawa; Ayumu Yabutani; Sho Iwayama; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Hideto Miyake

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[12p-N101-1~20] 15.4 III-V-group nitride crystals

Sun. Sep 12, 2021 1:00 PM - 6:30 PM N101 (Oral)

Kazunobu Kojima(Tohoku Univ.), Shugo Nitta(Nagoya Univ.), Maki Kushimoto(Nagoya Univ.)

5:15 PM - 5:30 PM

△ [12p-N101-16] Dependence of threshold Power Density on AlGaN underlying layer for AlGaN-based optical-pumped UV-B lasers

〇Ryota Hasegawa¹, Shunya Tanaka¹, Tomoya Omori¹, Kazuki Yamada¹, Moe Shimokawa¹, Ayumu Yabutani¹, Sho Iwayama^1,2, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ.)

Keywords:semiconductor, UV-B, AlGaN

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