[12p-N101-1~20] 15.4 III-V-group nitride crystals

△ [12p-N101-6] Fabrication of Transverse Quasi-Phase-Mached Double-Layer Polarity Inverted AlN Waveguide for 230-nm Far-UV Second Harmonic Generation

〇(M2)Soshi Umeda¹, Hiroto Honda¹, Tomoaki Nambu¹, Shuhei Ichikawa^1,2, Yasufumi Fujiwara¹, Kanako Shojiki^1,3, Hideto Miyake^3,4, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Osaka Univ., 2.Research Center for UHVEM, Osaka Univ., 3.Mie Univ., 4.Reginal Innovation Studies, Mie Univ.)

Keywords:AlN, Far-UV, Second Harmonic Generation

With the outbreak of the COVID-19, attention has been focused on virus inactivation and disinfection using deep ultraviolet light. In particular, far-ultraviolet light with a wavelength of around 230 nm is harmless to the human body because it is absorbed by the stratum corneum at the top surface of the skin. In contrast, AlN is transparent up to 210 nm and has high optical nonlinearity, so we have designed a 230 nm band second harmonic generation (SHG) device using an AlN bilayer polarity inversion stacked structure. In this paper, we report on the fabrication process of 230 nm deep-ultraviolet (DUV) Transverse QPM SHG devices using Double-layer polarity inverted AlN thin films deposited by sputtering annealing.