[12p-N101-1~20] 15.4 III-V-group nitride crystals

△ [12p-N101-7] Design of Transverse Quasi-Phase-Matched HfO₂/AlN Waveguide for 230-nm Far-UV Second Harmonic Generation

〇Hiroto Honda¹, Soshi Umeda¹, Kanako Shojiki^1,2, Hideto Miyake^2,3, Masahiro Uemukai¹, Tomoyui Tanikawa¹, Ryuji Katayaka¹ (1.Osaka Univ., 2.Mie Univ., 3.Regional Innovation Studies, Mie Univ.)

Keywords:Ultraviolet light, Nitride semiconductor, Optical Devices

Far-UV near 230 nm in wavelength is absorbed by the stratum corneum, which is the surface layer of the skin without nucleic acids.On the other hand, it is also effective in inactivating and sterilizing viruses. Therefore, far UV light sources are attracting attention. We have proposed a polarity inverted transverse quasi-phase-matched (QPM) waveguide device using second harmonic generation (SHG) from nitride semiconductors with strong optical nonlinearity as a light source in this wavelength band. However, the fabrication of polarity inverted structures is complicated. In this talk, we propose the design a non-polar/polar transverse QPM waveguide consisting of an amorphous film and an AlN film, which is easy to fabricate, although the wavelength conversion efficiency is lower.