[12p-N101-1~20] 15.4 III-V-group nitride crystals

[12p-N101-8] Potential distribution analysis of AlGaN homo junction tunnel junction by electron holography

〇Kengo Nagata^1,2, Satoshi Anada³, Yoshiki Saito², Maki Kushimoto¹, Yoshio Honda⁴, Tetsuya Takeuchi⁵, Hiroshi Amano⁴, Kazuo Yamamoto³, Tsukasa Hirayama^3,4 (1.Dept. of Electronics Nagoya Univ., 2.Toyoda Gosei Co., Ltd., 3.Japan Fine Ceramics Center, 4.IMaSS, Nagoya Univ., 5.Meijo Univ.)

Keywords:UV LED, Tunnel junction, AlGaN

To improve the LED characteristics, it is important to accurately evaluate the potential distribution inside the LED. In this study, we directly observe the potential distribution inside AlGaN homojunction tunnel junction deep UV LEDs by using electron holography. The phase distribution reflected the dopant type and concentration distribution when compared to the design structure and impurity concertation profile by SIMS. The of the depletion layer width extending from the TJ interface was estimated to be approximately 10 nm.