[12p-N101-1~20] 15.4 III-V-group nitride crystals

[12p-N101-9] Low voltage operation of AlGaN homojunction tunnel junction deep UV LED (2)

〇Kengo Nagata^1,2, Hiroshi Miwa², Shinichi Matsui², Shinya Boyama², Yoshiki Saito², Maki Kushimoto¹, Yoshio Honda³, Tetsuya Takeuchi⁴, Hiroshi Amano³ (1.Dept. of Electronics Nagoya Univ., 2.Toyoda Gosei Co., Ltd., 3.IMaSS, Nagoya Univ., 4.Meijo Univ.)

Keywords:UV LED, Tunnel junction, AlGaN

In this study, we optimized the device structure of the AlGaN homojunction tunnel junction (TJ) and attempted further low operating voltage. The lowest operating voltage was 8.8 V at a current density of 63 A / cm². We considered that the reduction of operating voltage was due to the reduction in series resistance of p⁺-AlGaN since the voltage rise estimated from the series resistance of n⁺-AlGaN was approximately 0.02V or less.