[12p-N205-1~14] 12.4 Organic light-emitting devices and organic transistors

△ [12p-N205-4] Development of anti-ambipolar transistors
Part Ⅵ: Application to a multifunctional logic gate device

〇(M2)Kosuke Honma^1,2, Ryoma Hayakawa¹, Shu Nakaharai¹, Kaname Kanai², Yutaka Wakayama^1,2 (1.NIMS, 2.Tokyo Univ. of Sci)

Keywords:Anti-ambipolar transistor, Multifunctional logic gate device, Organic Electronics

Development of high-performance organic logic circuits is highly required for the coming IoT society. In this regard, we achieved a voltage-driven-reconfigurable logic circuit based on a dual-gate-type anti-ambipolar transistor (DG-AAT). First, the distinctive peak drain current in the AAT was successfully controlled by the top and bottom gate voltages at room temperature. Furthermore, the feature enabled multiple logic gate operations, e.g., NOR and NAND, in the same DG-AAT just by changing the drain voltages.