2021年第82回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

12 有機分子・バイオエレクトロニクス » 12.4 有機EL・トランジスタ

[12p-N205-1~14] 12.4 有機EL・トランジスタ

2021年9月12日(日) 13:45 〜 17:45 N205 (口頭)

永瀬 隆(阪府大)、横田 知之(東大)

15:00 〜 15:15

[12p-N205-6] Vertical organic field-effect transistors using reduced solution-processed graphene oxide films

〇(D)KUN QIAO1、Mitsuharu Suzuki1、Ken-ichi Nakayama1 (1.Osaka Univ.)

キーワード:vertical organic field effect transisitors, reduced graphene oxide

Here, we proposed a promising method to prepare the ultrathin reduced graphene oxide (rGO) film by spincoating graphene oxide (GO) dispersion. The obtained rGO film could be effectively applied as gate tunable electrode in vertical organic field effect transistors (VOFETs). The fabricated VOFETs exhibited a good electrical properties, with the highest current on/off ratio exceeding 104 . The maximum current density of 1.42 mA/cm2 at VD= + 5 V and VG = + 40 V. The use of a simple, solution-processable approach to fabricate the rGO eletrode would open up new opportunities for the future large-scale application in organic electronics.