[12p-N206-1~19] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▼ [12p-N206-13] Probe-Induced Defect Origin of Reverse Leakage Current in HVPE (001) b-Ga₂O₃ SBDs Identified by High Sensitive Emission Microscope

〇(D)Sayleap Sdoeung¹、Chaman Islam¹、Satoshi Masuya²、Kohei Sasaki²、Katsumi Kawasaki³、Jun Hirabayashi³、Akito Kuramata²、Makoto Kasu¹ (1.Saga Univ.、2.Novel Crystal Technology、3.TDK)

キーワード：beta-gallium oxide, crystal defects, Schottky barrier diode

β-Ga₂O₃ has a bandgap of 4.43–4.8 eV, which is wider than that of SiC and GaN; hence, it can be used to develop high-efficient high-power electronic devices. However, it has been observed that the SBDs fabricated on a single wafer, some show a higher reverse current and a lower breakdown voltage than their neighbors. We have confirmed that polycrystalline defects and stacking faults are killer defects. In this study, we have found that the probe-induced defect is a leakage current path of HVPE (001) β-Ga₂O₃ SBDs by emission microscopy and synchrotron X-ray topography