[12p-N305-1~14] 13.7 Compound and power devices, process technology and characterization

[12p-N305-12] Fabrication of Lateral Ga₂O₃ MOSFETs on Nitrogen-Implanted Substrates

〇Takumi Ohtsuki¹, Masataka Higashiwaki¹ (1.NICT)

Keywords:gallium oxide, MOSFET, nitrogen implantation

When a Ga₂O₃ layer is grown on a substrate to fabricate a lateral field effect transistor (FET), it is known that Si derived from Si-O compounds in the atmosphere accumulates at the interface between the Ga₂O₃ substrate and the epitaxial layer, which causes a leakage current at the interface. In this study, in order to compensate for the influence of Si, nitrogen (N) acting as an acceptor was implanted near the substrate surface on which a lateral Ga₂O₃ MOSFET was fabricated, and the device characteristics were evaluated.