[12p-N305-1~14] 13.7 Compound and power devices, process technology and characterization

[12p-N305-14] 5.0 kV normally-off β-Ga₂O₃ vertical transistor with HfO₂ gate-insulator

〇Daiki Wakimoto¹, Chia-Hung Lin¹, Quang Tu Thieu¹, Hironobu Miyamoto¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Tech.)

Keywords:beta-Gallium Oxide, vertical MOS transistor, HfO2 gate-insulator

High-voltage vertical β-Ga₂O₃ MOSFETs are developed with a low charge concentration of 4x10¹⁵ cm⁻³ and 45 mm-thick drift-layer. The developed device shows three terminal breakdown voltages to reach up to 5000 V without edge termination. The breakdown voltage is 1.9 times higher than that of the previously reported value of vertical Ga₂O₃ MOSFETs.