[12p-N305-1~14] 13.7 Compound and power devices, process technology and characterization

[12p-N305-7] Comparative study of MIS structure on N-polar and Ga-polar GaN

〇Takahiro Gotow¹, Tatsushi Suka¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech.)

Keywords:GaN MIS capacitor