[12p-N324-1~9] Application of low magnetic field for SDGs

[12p-N324-3] Effects of magnetic field intensity on the in-field reaction of Mn/Ga diffusion couple

〇Yoshifuru Mitsui¹, Yumi Watanabe¹, Ryota Kobayashi¹, Kohki Takahashi², Keiichi Koyama¹ (1.Kagoshima Univ., 2.IMR, Tohoku Univ.)

Keywords:In-field annealing, magnetic phase, reaction

For investigating the effects of magnetic field intensity on the reaction of Mn/Ga diffusion couple, in-field annealing at 773 and 573 K were performed. At 773 K, magnetic field was not effective for the thickness of reacted Mn₂Ga₅ phase for B < 5 T, while magnetic-field-induced retardation of the reaction exhibited at 10 T. At 573 K, the thickness of the Mn₂Ga₅ phase asymptocally decreased, which was different behavior to in-field annealing effects at 773 K.