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▼ [12p-N405-1] Terahertz radiation mechanism from a metal-insulator-semiconductor structure upon femtosecond laser illumination
Keywords:Metal-insulator-semiconductor, Terahertz emission spectrum
Local characterization of insulator/semiconductor interface is quite meaningful but challenging. It can provide huge local information including passivation, defects, and transient carrier dynamics of the semiconductor devices, such as the metal-insulator-semiconductor (MIS) structure. As the most promising method, the laser-excited Terahertz (THz) emission spectrum (LTEM) has great potential in achieving such goal due to its nondestructive and noncontact manner. However, the mechanism of the THz emission from the insulator/semiconductor interface is complex and hard to understand, which limits its application. Therefore, it is necessary to provide a simplified formula for describing the mechanism of THz radiation. In this study, we formulated the mechanism of THz radiation based on a Si metal-oxide-semiconductor (MOS) structure to semi-quantitatively evaluate the MOS devices.