[12p-N405-1~11] 4.6 Terahertz Photonics

▲ [12p-N405-3] Temperature dependence of anisotropic terahertz conductivity of unintentionally doped β-gallium oxide

〇(M2)Ke Wang¹、Hao Jiang¹、Hironaru Murakami¹、Masayoshi Tonouchi¹ (1.Osaka Univ.)

キーワード：gallium oxide, temperature dependence, anisotropic

Although wide bandgap semiconductor Ga₂O₃ attracts much attention for the application to high power devices, it has still many unknown properties, which include the optical properties at high temperatures. In the present work, we have evaluated the illumination effects on the photocarrier dynamics of undoped β-Ga₂O₃ wafers by means of terahertz time-domain spectroscopy
(THz-TDS) . We use here the home-made temperature programed THz-TDS system.