Construction and evaluation of PR measuring device for (100) GaAsBi/GaAs QWs

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Sun. Sep 12, 2021 1:00 PM - 4:15 PM N406 (Oral)

1:30 PM - 1:45 PM

〇Takuma Hayashi¹, Ayaka Shimizu¹, Yukimasa Yukutake¹, Satoshi Shimomura¹ (1.Ehime Univ.)

Keywords:GaAsBi