Oral presentation

[12a-N406-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Sun. Sep 12, 2021 9:00 AM - 12:00 PM N406 (Oral)

Hidetoshi Suzuki(Miyazaki Univ.), Yukihiro Harada(Kobe Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[12a-N406-1] Initial process of GaAs capping on InAs quantum dots on GaAs (001)

〇(M2)Natsuki Wakahara¹, Ronel Roca¹, Itaru Kamiya¹ (1.Toyota Tech Inst.)

9:15 AM - 9:30 AM

△ [12a-N406-2] Zn Doped InAs Thin Films On GaAs Substrate By MOVPE Methodevaluated by Raman scattering

〇Yasushi Hirata¹, Shota Nakagawa¹, Masakazu Arai¹, Koji Maeda¹ (1.Miyazaki Univ.)

9:30 AM - 9:45 AM

[12a-N406-3] Impact of low temperature cover layer growth of InAs/GaAs quantum dots on their optical properties

〇Shigekazu Okumura^1,2, Kazuki Fujisawa¹, Tamami Naruke¹, Kenichi Nishi¹, Yutaka Onishi¹, Keizo Takemasa¹, Mitsuru Sugawara¹, Masakazu Sugiyama² (1.QD laser, 2.RCAST Univ. of Tokyo)

10:00 AM - 10:15 AM

[12a-N406-4] Study on p-doping method for improving optical spin properties of InGaAs quantum dots

〇Kazuya Sakamoto¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1.IST,Hokudai univ.)

10:15 AM - 10:30 AM

[12a-N406-5] Time-resolved emission properties of InAs quantum dots with different growth rates of GaAs cap layer

〇Sohsuke Izumi¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

10:30 AM - 10:45 AM

[12a-N406-6] MBE growth of (110) strained InGaAs quantum wells with long carrier lifetime at room temperature

〇Satoshi Iba¹, Yuzo Ohno^1,2 (1.AIST, 2.Univ. of Tsukuba)

10:45 AM - 11:00 AM

[12a-N406-7] Photoluminescence emission from InAs / GaAs single quantum wells

〇Haruka Arita¹, Takashi Tsukasaki¹, Takuma Fujimoto¹, Toshiki Makimoto¹ (1.Waseda Univ.)

11:15 AM - 11:30 AM

[12a-N406-8] Molecular beam epitaxy of InSb layers on Germanium substrates

〇Shinichirou Gozu¹ (1.AIST)

11:30 AM - 11:45 AM

[12a-N406-9] Molecular beam epitaxial growth of photocathode structure AlGaAs/GaAs superlattice using As₂ over 700℃

〇Reiji Suzuki¹, Fumitaro Ishikawa¹, Anna Honda², Daiki Sato², Atsushi Koizumi², Tomohiro Nishitani^2,3, Masao Tabuchi⁴ (1.Ehime Univ., 2.Photo electron Soul, 3.Nagoya Univ. IMaSS, 4.Nagoya Univ. SRC)

11:45 AM - 12:00 PM

[12a-N406-10] Multi-category classification of RHEED patterns using machine learning

〇JINKWAN KWOEN¹, Yasuhiko Arakawa¹ (1.NanoQuine, U. Tokyo)

Oral presentation

[12p-N406-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Sun. Sep 12, 2021 1:00 PM - 4:15 PM N406 (Oral)

Takuo Sasaki(QST), Shigeo Asahi(Kobe Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[12p-N406-1] Si-GaAsN evaluated by photoconductivity measurement

〇Yuito Yamada¹, Takashi Tsukasaki¹, Koichiro Shimizu¹, Toshiki Makimoto¹ (1.Waseda Univ.)

1:15 PM - 1:30 PM

[12p-N406-2] Theoretical Investigation on Phosphorus-Vacancy-Mediated Annihilation of Nitrogen Related Point Defects in GaPN Alloy(2)

〇Shun One¹, Keisuke Yamane¹, Akihiro Wakahara¹ (1.Toyohashi Tech.)

1:30 PM - 1:45 PM

[12p-N406-3] Construction and evaluation of PR measuring device for (100) GaAsBi/GaAs QWs

〇Takuma Hayashi¹, Ayaka Shimizu¹, Yukimasa Yukutake¹, Satoshi Shimomura¹ (1.Ehime Univ.)

1:45 PM - 2:00 PM

[12p-N406-4] DLTS study of deep levels in n-type GaAsBi alloy

〇Sho Hasegawa¹, Manuel Fregolent², Matteo Buffolo², Carlo Santi², Gaudenzio Meneghesso², Enrico Zanoni², Junta Mathumura¹, Hiroyuki Nishinaka¹, Matteo Meneghini², Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech., 2.University of Padova)

2:00 PM - 2:15 PM

[12p-N406-5] MBE growth of GaNAsBi/GaAs multiple quantum well structures

〇Sho Hasegawa¹, Hiromu Kawata¹, Ryuya Aoki¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

2:15 PM - 2:30 PM

△ [12p-N406-6] Growth condition for low-temperature-grown GaAs_1-xBi_xon the basis of the Langmuir adsorption model

〇(M2)Tatsuya Umenishi¹, Yuto Takagaki², Yoriko Tominaga^1,2, Mitsuki Yukimune³, Fumitaro Ishikawa³ (1.AdSE, Hiroshima Univ., 2.AdSM, Hiroshima Univ., 3.Ehime Univ.)

2:45 PM - 3:00 PM

[12p-N406-7] Surfactant effect of Bi during InAs quantum dot growth on InP(311)B substrate

〇Kouichi Akahane¹, Atsushi Matsumoto¹, Toshimasa Umezawa¹, Naokatsu Yamamoto¹, Yoriko Tominaga², Atsushi Kanno¹ (1.NICT, 2.Hiroshima Univ.)

3:00 PM - 3:15 PM

△ [12p-N406-8] Fabrication of low density InAs QDs for telecom-band single-photon emission by using Bi-assisted inter-diffusion epitaxy

〇Kiyora Kaneki¹, Kouichi Akahane², Tomohiro Maeda¹, Hideyuki Sotobayashi¹ (1.Aogaku Univ., 2.NICT)

3:15 PM - 3:30 PM

△ [12p-N406-9] MBE growth condition towards realization of InAs_1-xBi_x/GaAs QDs

〇Kenta Yoshioka¹, Ryuki Yokote², Yuki Okamura¹, Shotaro Fujino², Yoriko Tominaga^1,2, Mitsuki Yukimune³, Fumitaro Ishikawa³, Shohei Hayashi⁴, Kouichi Akahane⁵ (1.Grad. Sch. Adv. Sci. Eng., Hiroshima Univ., 2.AdSM, Hiroshima Univ., 3.Grad. Sch. Sci. Eng., Ehime Univ., 4.Toray Research Center, 5.NICT)

3:30 PM - 3:45 PM

△ [12p-N406-10] Surface segregation of Bi atoms in InAs-based QDs

〇(M1)Yuki Okamura¹, Shotaro Fujino², Ryuki Yokote², Kenta Yoshioka¹, Yoriko Tominaga^1,2, Mitsuki Yukimune³, Fumitaro Ishikawa³, Shohei Hayashi⁴, Kouichi Akahane⁵ (1.AdSE, Hiroshima Univ., 2.AdSM, Hiroshima Univ., 3.Ehime Univ., 4.TRCS, 5.NICT)

3:45 PM - 4:00 PM

[12p-N406-11] Molecular Beam Epitaxial Growth of GaAs/GaNAsBi/GaAs Core-Multishell Nanowires

〇Yuto Torigoe¹, Kohei Yoshikawa¹, Masahiro Okujima¹, Syota Mori¹, Mitsuki Yukimune¹, Fumitaro Ishikawa¹ (1.Ehime Univ.)

4:00 PM - 4:15 PM

[12p-N406-12] Predominant incorporation of Bi atoms on (111)B rather than on (111)A with a stack-fault interface in InP_1-xBi_x nanowires

〇Guoqiang Zhang^1,2, Kouta Tateno^1,2, Katsuya Oguri¹, Hideki Gotoh¹ (1.NTT BRL, 2.NTT NPC)

Poster presentation

[23p-P06-1~4] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Sep 23, 2021 1:00 PM - 2:40 PM P06 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 2:40 PM

▲ [23p-P06-1] Post-growth annealing of Stacked Submonolayer (SML) InAs Nanostructures

〇(PC)Ronel Intal Roca¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

1:00 PM - 2:40 PM

[23p-P06-2] The effects of wet etching for polycrystal GaN on Si substrates

〇Yui Ishikawa¹, Shun Koshiba¹, Takashi Kuraoka¹, Hidehumi Akiyama² (1.Kagawa Univ, 2.The Institute for Solid State Physics, the University of Tokyo)

1:00 PM - 2:40 PM

[23p-P06-3] Caluculation of band offsets in InP/GaP-based Type II quantum dot structures for solar cell applications

〇Takeshi Arimoto¹, Keisuke Yamane¹, Reito Hori¹, Akihiro Wakahara¹ (1.toyohashi.tec)

1:00 PM - 2:40 PM

[23p-P06-4] Effect of Ⅴ/Ⅲ Ratio on Density and Size of InSb/GaSb Dots on GaSb Substrates

〇Kyosuke Yamamoto¹, Takashi Tsuchiya¹, Gozu Shinichiro², Endo Akira¹, Fujishiro Hiroki¹ (1.TUS, 2.AIST)

Sessions

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12a-N406-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12a-N406-1] Initial process of GaAs capping on InAs quantum dots on GaAs (001)

△ [12a-N406-2] Zn Doped InAs Thin Films On GaAs Substrate By MOVPE Methodevaluated by Raman scattering

[12a-N406-3] Impact of low temperature cover layer growth of InAs/GaAs quantum dots on their optical properties

[12a-N406-4] Study on p-doping method for improving optical spin properties of InGaAs quantum dots

[12a-N406-5] Time-resolved emission properties of InAs quantum dots with different growth rates of GaAs cap layer

[12a-N406-6] MBE growth of (110) strained InGaAs quantum wells with long carrier lifetime at room temperature

[12a-N406-7] Photoluminescence emission from InAs / GaAs single quantum wells

[12a-N406-8] Molecular beam epitaxy of InSb layers on Germanium substrates

[12a-N406-9] Molecular beam epitaxial growth of photocathode structure AlGaAs/GaAs superlattice using As₂ over 700℃

[12a-N406-10] Multi-category classification of RHEED patterns using machine learning

[12p-N406-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12p-N406-1] Si-GaAsN evaluated by photoconductivity measurement

[12p-N406-2] Theoretical Investigation on Phosphorus-Vacancy-Mediated Annihilation of Nitrogen Related Point Defects in GaPN Alloy(2)

[12p-N406-3] Construction and evaluation of PR measuring device for (100) GaAsBi/GaAs QWs

[12p-N406-4] DLTS study of deep levels in n-type GaAsBi alloy

[12p-N406-5] MBE growth of GaNAsBi/GaAs multiple quantum well structures

△ [12p-N406-6] Growth condition for low-temperature-grown GaAs_1-xBi_xon the basis of the Langmuir adsorption model

[12p-N406-7] Surfactant effect of Bi during InAs quantum dot growth on InP(311)B substrate

△ [12p-N406-8] Fabrication of low density InAs QDs for telecom-band single-photon emission by using Bi-assisted inter-diffusion epitaxy

△ [12p-N406-9] MBE growth condition towards realization of InAs_1-xBi_x/GaAs QDs

△ [12p-N406-10] Surface segregation of Bi atoms in InAs-based QDs

[12p-N406-11] Molecular Beam Epitaxial Growth of GaAs/GaNAsBi/GaAs Core-Multishell Nanowires

[12p-N406-12] Predominant incorporation of Bi atoms on (111)B rather than on (111)A with a stack-fault interface in InP_1-xBi_x nanowires

[23p-P06-1~4] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

▲ [23p-P06-1] Post-growth annealing of Stacked Submonolayer (SML) InAs Nanostructures

[23p-P06-2] The effects of wet etching for polycrystal GaN on Si substrates

[23p-P06-3] Caluculation of band offsets in InP/GaP-based Type II quantum dot structures for solar cell applications

[23p-P06-4] Effect of Ⅴ/Ⅲ Ratio on Density and Size of InSb/GaSb Dots on GaSb Substrates

Authenticate

Sessions

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12a-N406-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

△ [12a-N406-2] Zn Doped InAs Thin Films On GaAs Substrate By MOVPE Methodevaluated by Raman scattering

[12p-N406-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

△ [12p-N406-6] Growth condition for low-temperature-grown GaAs1-xBixon the basis of the Langmuir adsorption model

△ [12p-N406-8] Fabrication of low density InAs QDs for telecom-band single-photon emission by using Bi-assisted inter-diffusion epitaxy

△ [12p-N406-9] MBE growth condition towards realization of InAs1-xBix/GaAs QDs

△ [12p-N406-10] Surface segregation of Bi atoms in InAs-based QDs

[23p-P06-1~4] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

▲ [23p-P06-1] Post-growth annealing of Stacked Submonolayer (SML) InAs Nanostructures

Authenticate

△ [12p-N406-6] Growth condition for low-temperature-grown GaAs_1-xBi_xon the basis of the Langmuir adsorption model

△ [12p-N406-9] MBE growth condition towards realization of InAs_1-xBi_x/GaAs QDs