[12a-N406-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12a-N406-3] Impact of low temperature cover layer growth of InAs/GaAs quantum dots on their optical properties

〇Shigekazu Okumura^1,2, Kazuki Fujisawa¹, Tamami Naruke¹, Kenichi Nishi¹, Yutaka Onishi¹, Keizo Takemasa¹, Mitsuru Sugawara¹, Masakazu Sugiyama² (1.QD laser, 2.RCAST Univ. of Tokyo)

Keywords:MBE, Quantum dots, Photoluminescence

The effects of a low-temperature cover layer growths on the optical properties of InAs/GaAs quantum dot structures were investigated as a function of growth temperature and thickness. As a result, we found that pits formed by the strain of quantum dots during the low-temperature cover layer growth are the origin of dislocations, and it is important to have a surface with reduced pits before the high-temperature middle GaAs layer growth in order to obtain high optical properties.