[12p-N406-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12p-N406-7] Surfactant effect of Bi during InAs quantum dot growth on InP(311)B substrate

〇Kouichi Akahane¹, Atsushi Matsumoto¹, Toshimasa Umezawa¹, Naokatsu Yamamoto¹, Yoriko Tominaga², Atsushi Kanno¹ (1.NICT, 2.Hiroshima Univ.)

Keywords:quantum dot, Bismuth, surfactant

In this study, we investigated the surfactant effect of Bi during the growth of InAs quantum dots (QDs) on an InP(311)B substrate.