Tatsuya Umenishi

→ Search for Tatsuya Umenishi in Google Scholar

Speaker, Author, Co-Author

Sun. Sep 12, 2021 1:00 PM - 4:15 PM N406 (Oral)

Oral presentation
| 15 Crystal Engineering
| 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12p-N406-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

2:15 PM - 2:30 PM

△ [12p-N406-6] Growth condition for low-temperature-grown GaAs_1-xBi_xon the basis of the Langmuir adsorption model

〇(M2)Tatsuya Umenishi¹, Yuto Takagaki², Yoriko Tominaga^1,2, Mitsuki Yukimune³, Fumitaro Ishikawa³ (1.AdSE, Hiroshima Univ., 2.AdSM, Hiroshima Univ., 3.Ehime Univ.)