[12p-N406-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

△ [12p-N406-9] MBE growth condition towards realization of InAs_1-xBi_x/GaAs QDs

〇Kenta Yoshioka¹, Ryuki Yokote², Yuki Okamura¹, Shotaro Fujino², Yoriko Tominaga^1,2, Mitsuki Yukimune³, Fumitaro Ishikawa³, Shohei Hayashi⁴, Kouichi Akahane⁵ (1.Grad. Sch. Adv. Sci. Eng., Hiroshima Univ., 2.AdSM, Hiroshima Univ., 3.Grad. Sch. Sci. Eng., Ehime Univ., 4.Toray Research Center, 5.NICT)

Keywords:Quantum Dots, Bismuth, InAsBi