[12p-N406-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12p-N406-4] DLTS study of deep levels in n-type GaAsBi alloy

〇Sho Hasegawa¹, Manuel Fregolent², Matteo Buffolo², Carlo Santi², Gaudenzio Meneghesso², Enrico Zanoni², Junta Mathumura¹, Hiroyuki Nishinaka¹, Matteo Meneghini², Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech., 2.University of Padova)

Keywords:semiconductor, crystal growth, deep level