[12p-S301-1~15] 6.2 Carbon-based thin films

[12p-S301-1] Distinguishing crystal quality for intrinsic layers of pin diamond diodes fabricated on the p-type substrates with different boron concentration levels

〇Daisuke Takeuchi^1,2, Tatsuya Honbu^1,2, Kimiyoshi Ichikawa³, Shinya Ohmagari¹, Tokuyuki Teraji³, Masahiko Ogura¹, Hiromitsu Kato¹, Toshiharu Makino¹, Ichiro Shoji² (1.AIST, 2.Chuo Univ., 3.NIMS)

Keywords:Two-photon excitation photoluminescence, Cathodoluminescence, diffusion length

In the electron emission experiments of diamond pin diode with negative electron affinity surfaces exhibited a trend that the electron emission efficiency of diodes fabricated on lightly doped p-type IIb{111} substrates became 2 orders of magnitude or higher than that on heavily doped ones. In order to distinguish the crystal quality between these i-layers, cathodoluminescence and two photon excitation photoluminescence (2PPL) imaging were applied to the i-layers. Results could be explained well with a model taking into account principles of these observation methods and diffusion length of free excitons.