[12p-S301-1~15] 6.2 Carbon-based thin films

[12p-S301-2] Comparison of electroluminescence of diamond pin diodes fabricated on p-type (111) substrates with different boron concentrations levels

〇Takahisa Yokota^1,2, Tatsuya Honbu^1,2, Daisuke Takeuchi^1,2, Toshiharu Makino², Hiromitsu Kato², Masahiko Ogura², Shoji Ichiro¹ (1.Chuo Univ., 2.AIST)

Keywords:diamond semiconductor, electron emission, electroluminescence

The electron emission from diamond pin diodes in vacuum observed at room temperature showed a trend that the electron emission efficiency of the emitter fabricated on low-doped p-type (111) substrates exhibited two orders of magnitude or more higher than that of heavily-doped ones. To investigate the carrier behavior, we performed electroluminescence (EL) measurements at room temperature on the same pin diodes as mentioned above; one was on a heavily-doped p⁺⁺-type substrate and the other on a low p-type substrate. According to EL and cathodoluminescence results, we discuss carrier diffusion behavior in the pin diodes to elucidate the physical background of the trend we found.