[12p-S301-1~15] 6.2 Carbon-based thin films

△ [12p-S301-12] Improvement of current density in Vertical-Type 2DHG Diamond MOSFET by high concentration boron doped layer

〇Kosuke Ota¹, Naoya Niikura¹, Yuta Nameki¹, Runming Zhang¹, Jun Tsunoda¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Waseda Zaiken.)

Keywords:Diamond, MOSFET, Vertical type

In this study, we fabricated (001) vertical two-dimensional hole gas (2DHG) diamond MOSFETs with a high concentration boron-doped (p++) layer under the source electrode for the first time in order to reduce the source contact resistance R_C. A maximum drain current density of I_D,max: 553 mA/mm was observed, which is more than 40% higher than that of a device of the same size without the p++ layer (339 mA/mm). The current density was improved by more than 40 % compared to that of the same size device without p++ layer (339 mA/mm), and the highest value in the same L_SS.