[12p-S301-1~15] 6.2 Carbon-based thin films

△ [12p-S301-11] Reduction of contact resistance to achieve high current density of high-concentration boron-doped layer diamond MOSFETs

〇Akira Takahashi¹, Ken Kudara¹, Fuga Asai¹, Masakazu Arai¹, Hiroshi Kawarada^1,2 (1.waseda univ., 2.Kagami Memorial Research Institute)

Keywords:diamond

In this study, the effect of the high-concentration boron-doped layer added on the diamond substrate to achieve a large current density on the contact resistance of the MOSFET was investigated by TLM measurement. As a result, the addition of the boron-doped layer reduced the sheet resistance and the value of the contact resistance to 1/10 or less. Furthermore, the resistance value between the boron-doped layer and 2DHG was calculated to be 0.96 Ω mm, and it was confirmed that it was effective for high-frequency high power because there were almost no barriers.