[12p-S301-1~15] 6.2 Carbon-based thin films

△ [12p-S301-10] Improvement of electrical characteristics for diamond inversion-type MOSFET
by additional growth on channel

〇(M2)Tomoya Yamakawa¹, Tsubasa Matsumoto¹, Takao Inokuma¹, Satoshi Yamasaki¹, Xufang Zhang¹, Hiromitsu Kato², Masahiko Ogura², Toshiharu Makino², Christoph E. Nebel³, Norio Tokuda¹ (1.Kanazawa Univ., 2.AIST, 3.Diacara)

Keywords:Diamond, MOSFET

In 2016, our group developed the world's first inversion-type diamond MOSFET. However, diamond is difficult to process, and many issues still remain regarding the device fabrication process. Specifically, the method to form an embedded layer with low resistance had not been established. In this study, an embedded layer was prepared as channels by additional growth of n-layers after performing the selective growth process, and the electrical characteristics of the diamond MOSFETs before and after additional growth of n-layers were evaluated and compared.