[13a-N101-1~9] 15.4 III-V-group nitride crystals

[13a-N101-2] Growth of InGaN Film on ScAlMgO₄ Substrate by RF-MBE Ⅱ

〇(D)Naoki Goto¹, Seiya Kayamoto¹, Yuuya Kuroda¹, yuuichi wada¹, Takashi Fujii^1,2, Shinichiro Mouri¹, Yuuji Shiraishi², Tuguo Fukuda², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.Fukuda Crystal Lab.)

Keywords:nitride semiconductor, ScAlMgO4, RF-MBE

ScAlMgO4 (hereinafter referred to as SAM) is attracting attention as a substrate for growing nitride semiconductors. By improving the crystallinity of SAM, it is required to establish a growth technology for nitride semiconductor films on SAM. We grew InGaN on a SAM substrate by the RF-MBE method. We obtain In composition that is 14.3 % by reciprocal space mapping of the InGaN film. We will report on the growth conditions and the InGaN film grown by applying the DERI method, which is proposed crystal growth method for InN.