Improved electron mobility in InN/GaN heterostructure

Taiki Ito; Junichiro Kitamura; Kenta Tsukamoto; Shuto Murakumo; Hirokazu Sasaki; Ryota Doi; Daiki Nagatsuyu; Toshiki Makimoto

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13a-N101-1~9] 15.4 III-V-group nitride crystals

Mon. Sep 13, 2021 9:00 AM - 11:30 AM N101 (Oral)

Tsutomu Araki(Ritsumeikan Univ.), Atsushi Kobayashi(Univ. of Tokyo)

10:30 AM - 10:45 AM

[13a-N101-6] Improved electron mobility in InN/GaN heterostructure

〇Taiki Ito¹, Junichiro Kitamura¹, Kenta Tsukamoto¹, Shuto Murakumo¹, Hirokazu Sasaki¹, Ryota Doi¹, Daiki Nagatsuyu¹, Toshiki Makimoto¹ (1.Waseda Univ.)

Keywords:InN/GaN heterostructure, RF-MBE

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