[13a-N205-1~12] 12.4 Organic light-emitting devices and organic transistors

[13a-N205-11] Controlling the internal stress of ITO layer for improving the performance of transparent organic light emitting diode

〇Kouji Suemori¹, Nobuko Fukuda¹, Toshihide Kamata¹ (1.AIST)

Keywords:Internal stress, transparent organic device, transparent conductive oxide

Incorporation of functional metal oxides in organic devices enables the creation of novel electronic devices that have both the advantages of organic materials, such as flexibility and light weight, as well as those of metal oxide materials, such as optical transparency and stability against ambient air. In this study, we investigated changes in the morphological and electrical characteristics of transparent organic light emitting diodes whose top and bottom electrodes are ITO. We show that microstructural changes in the device caused by the internal stress in ITO cause strong damage in the devices. The device characteristics were significantly improved by using an internal-stress-controlled ITO.