[13a-N304-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[13a-N304-2] A Charge-Based Analytical Threshold Voltage Definition Applicable to Cryogenic Temperatures

〇KIYOSHI TAKEUCHI¹, TOMOKO MIZUTANI¹, TAKUYA SARAYA¹, MASAHARU KOBAYASHI^1,2, TOSHIRO HIRAMOTO¹ (1.IIS, Univ. Tokyo, 2.d.lab, Univ. Tokyo)

Keywords:threshold voltage

While analytically defined threshold voltage (Vth) is important for modeling MOSFET operations, there are several shortcomings with the conventional 2(Eb-Ei) definition such as inapplicability to thin film devices (FinFET, FDSOI etc.) and inappropriate behavior at near zero temperature. To solve this problem, a new definition of Vth based on a standardized charge density vs voltage relationship is proposed.