[13a-N304-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[13a-N304-8] Development of EB lithography technique with negative resist for integrated silicon qubits

〇Kimihiko Kato¹, Yongxun Liu¹, Shigenori Murakami¹, Yukinori Morita¹, Takahiro Mori¹ (1.AIST)

Keywords:silicon, quantum bit, electron beam lithography

For future quantum computers, various silicon quantum bits (Si qubits) structures have been proposed and demonstrated actively. In order to accelerate these research and developments, development of a high-level lithography technique is required. In this study, we have developed process technologies for electron beam lithography with maN 2400 negative tone resist focusing on physically defined double-dot qubit structure and process simulation to predict experimentally obtained patterns with high accuracy.